日本a√视频在线,久久青青亚洲国产,亚洲一区欧美二区,免费g片在线观看网站

        <style id="k3y6c"><u id="k3y6c"></u></style>
        <s id="k3y6c"></s>
        <mark id="k3y6c"></mark>
          
          

          <mark id="k3y6c"></mark>

          新聞中心

          EEPW首頁(yè) > 電源與新能源 > 設(shè)計(jì)應(yīng)用 > 具有高溫工作能力的1700V SPT+ IGBT和二極管芯片組

          具有高溫工作能力的1700V SPT+ IGBT和二極管芯片組

          作者: 時(shí)間:2012-05-25 來(lái)源:網(wǎng)絡(luò) 收藏
          參考文獻(xiàn)

          本文引用地址:http://yuyingmama.com.cn/article/230468.htm

          [1] M. Rahimo et al., “SPT+, the Next Generation of Low-Loss HV-IGBTs” Proc. PCIM’05, Nürnberg, Germany, 2005.

          [2] A. Kopta et al., “6500V SPT+ HiPak Mudules Rated at 750A” Proc. PCIM’08, Nürnberg, Germany,2008.

          [3] V.Macary, G.Charitat, M.Bafleur, J.Buxo, P.Rossel “Comparison between Biased and Floating Guard Rings Used as Junction Termination Technique”, Proc. ISPSD’92, Tokyo, Japan, May 1992.

          [4] J. Lutz, U. Scheuermann, “Advantage of the New Controlled Axial Lifetime Diode“, Proc. PCIM’94 Nürnberg, Germany, 1994.

          [5] P. Hazdra, V.Komarnitskyy, “Lifetime control in silicon power P-i-N diode by ion irradiation: suppression of undesired leakage”, Microelectronics Journal, Volume 37, Issue 3 March 2006.

          [6] M. Rahimo et al., "Switching-Self-Clamping-Mode “SSCM”, a breakthrough in SOA performance for high voltage IGBTs and Diodes" ISPSD'04, Japan, 2004.

          原文作者和出處

          C. Corvasce, A.Kopta, M. Rahimo, A. Baschnagel, S. Geissmann, R. Schnell,

          ABB Switzerland Ltd, Semiconductors, Fabrikstrasse 3, CH - 5600 Lenzburg, Switzerland

          Tel: +41 58 586 17 74, email:chiara.corvasce@ch.abb.com■


          上一頁(yè) 1 2 3 4 5 下一頁(yè)

          評(píng)論


          相關(guān)推薦

          技術(shù)專區(qū)

          關(guān)閉