定義器件及寄生器件：

ELEMENT MOS {[type]} layer-a layer-b layer-c {layer-d};;device layer+g+s/d+sub

ELEMENT CAP {[type]} layer-a layer-b layer-c {layer-s}

ELEMENT RES {[type]} layer-a layer-b {layer-d}

ELEMENT BJT {[type]} layer-a layer-b layer-c layer-d {layer-s}

ELEMENT DIO {[type]} layer-a layer-b layer-c {layer-s}

ELEMENT LDD {[type]} layer-a layer-b layer-c layer-d {layer-e}

ELEMENT PAD {[type]} layer-a layer-b

ELEMENT device layer-a layer-b {layer-c} {layer-d} {layer-e}

PARASITIC CAP[R] [subtype] deviceLayer termLayer1 termLayer2

PARASITIC RES [type] layer-a layer-b {layer-c}

PARASITIC DIO [type] layer-a layer-b layer-c {layer-d} {layer-e}

標識device layer：

DEVTAG element[type] layer-b layer-c

(for tagging from a defined ELEMENT BJT device)

DEVTAG [L] layer-a layer-b layer-c

(for tagging from an intermediate layer)

DEVTAG [S] BJT [type] layer-d layer-e

用device layer將device layer number傳遞給device的其他層。

ATTACH device-subType parameter-file {parset-name} {}

當使用LEXTRACT NODE 選項可以提取source/drain 參數(shù)，使用ATTACH命令將這些參數(shù)分配給指定的MOS或LDD。

ATTRIBUTE CAP

For area and perimeter capacitance

PARASITIC CAP {type} layer-a layer-b layer-c

ATTRIBUTE CAP {type} value-a value-b

For same-layer fringe-field capacitance

PARASITIC CAP {type} layer-a layer-a layer-a

ATTRIBUTE CAP {type} value-a1 value-b1

ATTRIBUTE CAP {type} value-a2 value-b2

For same-layer or different-layer fringe-field capacitance

FRINGE CAP {type} layer-a layer-b

ATTRIBUTE CAP {type} value-a1 value-b1

ATTRIBUTE CAP {type} value-a2 value-b2

For overlap capacitance with consideration of the fringe effect of the first terminal layer on the overlap capacitance

PARASITIC CAP {subtype} device-layer terminal-layer1 terminal-layer2

ATTRIBUTE CAP {subtype} areaCoeff perimCoeff depthRange sidewallCoeff